| Part Number | NE321000 |
| Manufacturer | CEL |
| Title | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| Description | NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobilit... |
| Features |
• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11 • GATE LENGTH: ≤0.2 µm • GATE WIDTH: 160 µm D... |
| Datasheet |
 NE321000 Datasheet
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