| Part Number | BM2300 |
| Manufacturer | Bookly |
| Title | N-Channel Enhancement Mode MOSFET |
| Description | The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. Thi... |
| Features |
z 20V/6.0A, RDS(ON) = 27mΩ (Typ.) @VGS = 10V
z 20V/5.0A, RDS(ON) = 30mΩ @VGS = 4.5V
z 20V/4.5A, RDS(ON) = 34mΩ @VGS = 2.5V
z 20V/4.0A, RDS(ON) = 40mΩ @VGS = 1.8V
z Super high density cell design for
extremely low RDS(ON) z Exceptional on-resistance a...
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| Datasheet |
 BM2300 Datasheet
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