| Part Number | HVV1011-035 |
| Manufacturer | ASI |
| Title | RF transistor |
| Description | The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at fr... |
| Features |
High Power Gain Excellent Ruggedness 50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGS IDSX PD2 TS
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature
Junction Temperature
Value 95
-1...
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| Datasheet |
 HVV1011-035 Datasheet
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