| Part Number | SSC8362GS1 |
| Manufacturer | AFSEMI |
| Title | Dual N-Channel Enhancement Mode MOSFET |
| Description | This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-st... |
| Features |
VDS 60V
VGS ±20V
RDSon TYP 30mR@10V 35mR@4V5
ID 6.5A
General Description This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This dev... |
| Datasheet |
 SSC8362GS1 Datasheet
|
