| Part Number | SSC8339GS1 |
| Manufacturer | AFSEMI |
| Title | Dual P-Channel Enhancement Mode MOSFET |
| Description | Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state res... |
| Features |
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -10A
Applications Load Switch DCDC conversion NB battery Pin configuration General Description Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench te... |
| Datasheet |
 SSC8339GS1 Datasheet
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