| Part Number | SSC8329GS1 |
| Manufacturer | AFSEMI |
| Title | Dual P-Channel Enhancement Mode MOSFET |
| Description | This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resista... |
| Features |
VDS -20V
VGS ±12V
RDSon TYP 13mR@-4V5V 16mR@-2V5
ID -18A
Applications Load Switch DCDC conversion NB battery Pin configuration General Description This device is produced with high cell density, DMOS Top View D1 D1 D2 trench techn... |
| Datasheet |
 SSC8329GS1 Datasheet
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